Dubuque, IA Free Moderated Classifieds Site > OLD ADS FROM PREVIOUS YEARS
> 2009
> November
> Semiconductor devices,unitized
Semiconductor devices,unitized
COMPONENT NAME AND QUANTITY - 2 TRANSISTOR
SEMICONDUCTOR MATERIAL - SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC - 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE, RMS ALL TRANSISTOR
CURRENT RATING PER CHARACTERISTIC - 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC - 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT - 200.0 DEG CELSIUS JUNCTION
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION - TO-71
MOUNTING METHOD - CLIP AND TERMINAL
TERMINAL LENGTH - 0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER - 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY - 6 UNINSULATED WIRE LEAD
OVERALL LENGTH - 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER - 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED - AMPLIFIER
SPECIAL FEATURES - ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
