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16212 / MJF16212 si npn power bp junction transistor

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Description = Si NPN Power Bipolar Junction Transistor
I(C) Abs.(A) Collector Current = 10
Absolute Max. Power Diss. (W) = 50
h(FE) Min. Static Current Gain = 4.0
@I(C) (A) (Test Condition) = 10
@V(CE) (V) (Test Condition) = 5.0
f(T) Min. (Hz) Transition Freq = 2.8M
t(s) Max. (s) Storage time. = 4.0u
t(f) Max. (s) Fall time. = 500n
16212 / MJF16212 si npn power bp junction transistor